SiC MOSFET Vth Measurement for JEP183

SiC MOSFET Vth Measurement for JEP183

Application Notes

This application note introduces the threshold voltage (Vth) evaluation methods for SiC power MOSFETs based on the JEDEC publication - JEP183 and its related Keysight solutions.

Keysight offers two solutions for the Vth measurement on the SiC MOSFET that JEP183 describes.

 

• The B1505A (B1506A) with the JEP183 dedicated Application Tests implemented in the EasyEXPERT group+ software allows easy and accurate SiC Vth evaluation. In addition, the UltraHigh Current Unit (UHCU) and the High Voltage SMU (HVSMU) enhance the measurements in combination with the High-Voltage (HV) and the High-Current (HC) stress.

 

• The B2900B series SMU with the PathWave IV Curve Measurement Software allows faster measurements beyond the JEP183 requirements at a lower cost. However, some restrictions exist, such as no SiC Vth dedicated GUI nor Vth extraction capability and limited I/V range.

 

You can select the appropriate solution considering the conditions such as simplicity, scalability, cost, etc.