How to Measure Low-Frequency Noise Accurately

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Measuring low-frequency noise at wafer levels

Creating accurate low-frequency noise (LFN) models for metal-oxide-semiconductor field-effect transistor (MOSFET) devices requires measuring DC characteristics, flicker (1/f) noise, and random telegraph noise (RTN) at both the package and wafer levels. Measurement instruments with enhanced noise sensitivity and a broad noise analysis frequency range are required to characterize fine-pitch MOSFETs under ultra-low frequencies, high-current (up to 1 A), or high-voltage conditions.

Measure noise power spectral density (1/f noise) and noise in the time domain to fully characterize MOSFET LFN. Minimize external noise influences during scanning by placing the wafer probe and signal conditioning circuitry close to the device under test. Automate prober control and wafer mapping to eliminate external noise sources and enhance LFN model accuracy. Export measured data to connected modeling tools to develop robust MOSFET LFN models.

Integrated on-wafer noise measurement solution

Accurately measuring MOSFET low-frequency noise (LFN) requires an integrated solution at the wafer level. The Keysight advanced low-frequency noise analysis solution enables rapid on-wafer 1/f noise and RTN measurements. With noise sensitivity at -185 dBV2 / Hz, it can accurately characterize numerous devices at high voltages up to 200 V and ultra-low frequencies as low as 30 MHz. The solution integrates automated wafer-level measurement and wafer-mapping software. Modeling engineers can use 50 turnkey measurement drivers, covering most industry-standard probers. The measured noise data is ready to be exported to Keysight device modeling software to develop robust MOSFET LFN models.

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